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Abstract The quantum conductance and its classical wave analogue, the transmittance, are given by the sum of the eigenvalues of the transmission matrix. However, neither measurements nor theoretical analysis of the transmission eigenchannels have been carried out to explain the dips in conductance found in simulations as new channels are introduced. Here, we measure the microwave transmission matrices of random waveguides and find the spectra of all transmission eigenvalues, even at dips in the lowest transmission eigenchannel that are orders of magnitude below the noise in the transmission matrix. Transmission vanishes both at topological transmission zeros, where the energy density at the sample output vanishes, and at crossovers to new channels, where the longitudinal velocity vanishes. Zeros of transmission pull down all the transmission eigenvalues and thereby produce dips in the transmittance. These dips and the ability to probe the characteristics of even the lowest transmission eigenchannel are due to correlation among the eigenvalues. The precise tracking of dips in the conductance by peaks in the density of states points to a further correlation between zeros and poles of the transmission matrix. The conductance approaches Ohm’s law as the sample width increases in accord with the correspondence principle. 

Vanadium oxide (VOx) compounds feature various polymorphs, including V2O5 and VO2, with attractive temperature-tunable optical and electrical properties. However, to achieve the desired material property, high-temperature post-deposition annealing of as-grown VOx films is mostly needed, limiting its use for low-temperature compatible substrates and processes. Herein, we report on the low-temperature hollow-cathode plasma-enhanced atomic layer deposition (ALD) of crystalline vanadium oxide thin films using tetrakis(ethylmethylamido)vanadium and oxygen plasma as a precursor and coreactant, respectively. To extract the impact of the type of plasma source, VOx samples were also synthesized in an inductively coupled plasma-enhanced ALD reactor. Moreover, we have incorporated in situ Ar-plasma and ex situ thermal annealing to investigate the tunability of VOx structural properties. Our findings confirm that both plasma-ALD techniques were able to synthesize as-grown polycrystalline V2O5 films at 150 °C. Postdeposition thermal annealing converted the as-grown V2O5 films into different crystalline VOx states: V2O3, V4O9, and VO2. The last one, VO2 is particularly interesting as a phase-change material, and the metal-insulator transition around 70 °C has been confirmed using temperature-dependent x-ray diffraction and resistivity measurements.